nve corporation 11409 valley view road eden prairie, mn 55344-3617 usa telephone: (952) 829-9217 fax: (952) 829 -9189 internet: www.isoloop.com functional diagram t-series wide temperature range high speed digital coupler IL710T i so l oop ? features wide temperature range -40c to +125c +5v/+3.3v cmos/ttl compatible high speed: 110 mbd 2500vrms isolation (1 min.) 2 ns typical pulse width distortion 4 ns typical propagation delay skew 10 ns typical propagation delay 30 kv/us typical common mode rejection tri state output 8-pin pdip and 8-pin soic packages ul1577 approval pending iec 61010-1 approval pending isolation applications digital fieldbus rs485 and rs422 multiplexed data transmission data interfaces board-to-board communication digital noise reduction operator interface ground loop elimination peripheral interfaces serial communication logic level shifting description nve's family of high-speed digital isolators are cmos devices created by integrating active circuitry and our gmr-based and patented* isoloop? technology. the IL710T offers the user the widest temperature range available in digital couplers. the symmetric magnetic coupling barrier provides a typical propagation delay of only 10 ns and a pulse width distortion of 2 ns achieving the best specifications of any isolator device. typical transient immunity of 30 kv/s is unsurpassed. the il710 is ideally suited for isolating applications such as profibus, rs-485, rs422 and others. the il710 is available in 8-pin pdip and 8-pin soic packages and performance is specified over the temperature range of -40c to +125c. isoloop ? is a registered trademark of nve corporation * us patent number 5,831,426; 6,300,617 and others .com .com .com
IL710T i so l oop ? 2 nve corporation 11409 valley view road eden prairie, mn 55344-3617 usa telephone: (952) 829-9217 fax: (952) 829 -9189 internet: www.isoloop.com absolute maximum ratings parameters symbol min. max. units storage temperature t s -55 175 o c ambient operating temperature (1) t a -55 135 o c supply voltage v dd 1, v dd 2 -0.5 7 volts input voltage v i -0.5 v dd 1 +0.5 volts input voltage v oe -0.5 v dd 2 +0.5 volts output voltage v o -0.5 v dd 2 +0.5 volts output current drive i o 10 ma lead solder temperature (10s) 280 o c esd 2kv human body model insulation specifications parameter condition min. typ. max. units barrier impedance >10 14 ||3 ? || pf creepage distance (external) 7.036 ( pdip )mm 4.026 ( soic ) leakage current 240 v rms 0.2 a 60hz package characteristics parameter symbol min. typ. max. units test conditions capacitance (input-output) (5) c i - o 1.1 pf f= 1mhz thermal resistance ( pdip ) jct 150 o c/w thermocouple located at ( soic ) jct 240 o c/w center underside of package package power dissipation p pd 150 mw model pollution material max working package type degree group voltage 8?pdip 8?soic il710-2 ii iii 300 v rms 9 il710-3 ii iii 150 v rms 9 iec61010-1 tuv certificate numbers: pending (pdip) pending (soic) classification as table 1. ul 1577 component recognition program. file # pending rated 2500vrms for 1min. recommended operating conditions parameters symbol min. max. units ambient operating temperature t a -40 125 o c supply voltage (3.3/5.0 v operation) v dd 1 ,v dd 2 3.0 5.5 volts logic high input voltage v ih 2.4 v dd volts logic low input voltage v il 0 0.8 volts minimum signal rise and fall times t ir ,t if 1 sec .com .com .com .com
nve corporation 11409 valley view road eden prairie, mn 55344-3617 usa telephone: (952) 829-9217 fax: (952) 829 -9189 internet: www.isoloop.com electrical specifications electrical specifications are t min to t max unless otherwise stated. parameter symbol 3.0-3.6 v specifications 4.5-5.5 v specifications units test condition s dc specifications min. typ. max. min. typ. max. input quiescent supply current i dd 1 810 10 15 a output quiescent supply current i dd 2 3.3 4 5 6 ma logic input current i i -10 10 -10 10 a logic high output voltage v oh v dd 2 -0.1 v dd 2 v dd 2 -0.1 v dd 2 v i o =-20 a, v i =v ih 0.8*v dd 2 v dd 2 -0.5 0.8*v dd 2 v dd 2 -0.5 i o = -4 ma, v i =v ih logic low output voltage v ol 0 0.1 0 0.1 v i o = 20 a, v i =v il 0.5 0.8 0.5 0.8 i o = 4 ma, v i =v il switching specifications dynamic current consumption (6) 300 420 500 640 a/mhz maximum data rate 100 110 100 110 mbd c l = 15 pf pulse width pw 10 10 ns propagation delay input to output (high to low) t phl 12 18 10 15 ns c l = 15 pf propagation delay input to output (low to high) t plh 12 18 10 15 ns c l = 15 pf propagation delay enable to output (high to high impedance) t phz 35 3 5 ns c l = 15 pf propagation delay enable to output (low to high impedance) t plz 35 3 5 ns c l = 15 pf propagation delay enable to output (high impedance to high) t pzh 35 3 5 ns c l = 15 pf propagation delay enable to output (high impedance to low) t pzl 35 3 5 ns c l = 15 pf pulse width distortion (2) 23 2 3 propagation delay skew (3) t psk 4 6 4 6 ns c l = 15 pf output rise time (10-90%) t r 2 4 1 3 ns c l = 15 pf output fall time (10-90%) t f 2 4 1 3 ns c l = 15 pf common mode transient |cmh| immunity (output logic high or 20 30 20 30 kv/ s vcm = 300v logic low) (4) |cml| IL710T i so l oop ? 3 notes: 1. absolute maximum ambient operating temperature means the device will not be damaged if operated under these conditions. it does not guarantee performance. 2. pwd is defined as | t phl - t plh |. %pwd is equal to the pwd divided by the pulse width. 3. t psk is equal to the magnitude of the worst case difference in t phl and/or t plh that will be seen between units at 25 o c. 4. cm h is the maximum common mode voltage slew rate that can be sustained while maintaining v o > 0.8 v dd 2 . cm l is the maximum common mode input voltage that can be sustained while maintaining v o < 0.8 v. the common mode voltage slew rates apply to both rising and falling common mode voltage edges. 5. device is considered a two terminal device: pins 1-4 shorted and pins 5-8 shorted. 6. dynamic current is consumed on the vdd1 supply only. .com .com .com .com
IL710T i so l oop ? 4 nve corporation 11409 valley view road eden prairie, mn 55344-3617 usa telephone: (952) 829-9217 fax: (952) 829- 9189 internet: www.isoloop.com application notes: dynamic power consumption isoloop ? devices achieve their low power consumption from the manner by which they transmit data across the isolation barrier. by detecting the edge transitions of the input logic signal and converting these to narrow current pulses, a magnetic field is created around the gmr wheatstone bridge. depending on the direction of the magnetic field, the bridge causes the output comparator to switch following the input logic signal. power consumption is independent of mark-to-space ratio and solely dependent on frequency. this has obvious advantages over optocouplers whose power consumption is heavily dependent on its on-state and frequency. the maximum power supply current per channel for isoloop ? is: power supply decoupling both power supplies to these devices should be decoupled with low esr 100 nf ceramic capacitors. for data rates in excess of 10mbd, use of ground planes for both gnd1 and gnd2 is highly recommended. capacitors should be located as close as possible to the device. signal status on start-up and shut down to minimize power dissipation, the input signals are differentiated and then latched on the output side of the isolation barrier to reconstruct the signal. this could result in an ambiguous output state depending on power up, shutdown and power loss sequencing. therefore, the designer should consider the inclusion of an initialization signal in his start-up circuit. initialization consists of toggling the input either high then low or low then high, depending on the desired state. electrostatic discharge sensitivity this product has been tested for electrostatic sensitivity to the limits stated in the specifications. however, nve recommends that all integrated circuits be handled with appropriate care to avoid damage. damage caused by inappropriate handling or storage could range from performance degradation to complete failure. data transmission rates the reliability of a transmission system is directly related to the accuracy and quality of the transmitted digital information. for a digital system, those parameters which determine the limits of the data transmission are pulse width distortion and propagation delay skew . propagation delay is the time taken for the signal to travel through the device. this is usually different when sending a low-to-high than when sending a high-to-low signal. this difference, or error, is called pulse width distortion (pwd) and is usually in ns. it may also be expressed as a percentage: this figure is almost three times better than for any available optocoupler with the same temperature range, and two times better than any optocoupler regardless of published temperature range. the isoloop ? range of isolators surpasses the 10% maximum pwd recommended by profibus, and will run at almost 35 mb before reaching the 10% limit. propagation delay skew is the difference in time taken for two or more channels to propagate their signals. this becomes significant when clocking is involved since it is undesirable for the clock pulse to arrive before the data has settled. a short propagation delay skew is therefore critical, especially in high data rate parallel systems, to establish and maintain accuracy and repeatability. the isoloop ? range of isolators all have a maximum propagation delay skew of 6 ns, which is five times better than any optocoupler. pwd% = maximum pulse width distortion (ns) x 100% signal pulse width (ns) for example: for data rates of 12.5 mb pwd% = 3 ns x 100% = 3.75% 80 ns .com .com .com .com
IL710T i so l oop ? 5 nve corporation 11409 valley view road eden prairie, mn 55344-3617 usa telephone: (952) 829-9217 fax: (952) 829- 9189 internet: www.isoloop.com rs-485 truth table txd rts a b rxd 10zzx 00zzx 11101 01010 isolated profibus / rs-485 applications reference 485 drivers (texas instruments) 65als176 (-40c to +85c) 75als176 (0c to +70) v dd 1 and v iso should be decoupled with 10 nf capacitors at il710 supply pins .com .com .com .com
IL710T i so l oop ? nve corporation 11409 valley view road eden prairie, mn 55344-3617 usa telephone: (952) 829-9217 fax: (952) 829- 9189 internet: www.isoloop.com 6 truth table v i v oe v o lll hlh lhz hhz legend t plh propagation delay, low to high t phl propagation delay, high to low t pw minimum pulse width t plz propagation delay, low to high impedance t pzh propagation delay, high impedance to high t phz propagation delay, high to high impedance t pzl propagation delay, high impedance to low t r rise time t f fall time timing diagram ir soldering profile pin configuration recommended profile shown. maximum temperature allowed on any profile is 260 c. .com .com .com .com
7 nve corporation 11409 valley view road eden prairie, mn 55344-3617 usa telephone: (952) 829-9217 fax: (952) 829 -9189 internet: www.isoloop.com il710-2 (8-pin pdip package) il710-3 (small outline soic-8 package) IL710T i so l oop ? ordering information: use the following format to order these devices il 710 t -2 tr7 bulk package blank = tube tr7 = 7?? tape and reel tr13 = 13?? tape and reel package -2 = pdip -3 = soic (0.15??) temperature t = -40c to +125c base part number 710 = 1 drive channel product family il = isolators valid part numbers il 710t-2 il 710t-3 il 710t-3tr13 il 710t-3tr7 .com .com .com .com
nve corporation 11409 valley view road eden prairie, mn 55344-3617 usa telephone: (952) 829-9217 fax: (952) 829-9189 internet: www.nve.com e-mail: isoinfo@nve.com about nve nve corporation is a world leader in the practical commercialization of "spintronics," which many experts believe represents the next generation of microelectronics ? the successor to the transistor. unlike conventional electronics, which rely on electron charge, spintronics uses electron spin to store and transmit information. spintronics devices are smaller, faster, and more accurate, compared to charge-based microelectronics. it is the spin of electrons that causes magnetism. nve's products use proprietary spintronic materials called giant magnetoresistors (gmr). these materials are made of exotic alloys a few atoms thick, and provide very large signals (the "giant" in "giant magnetoresistor"). nve has the unique capability to combine leading edge gmr materials with integrated circuits to make high performance electronic components. we are pioneers in creating practical products using this revolutionary technology and introduced the world's first gmr products in 1994. we also license spintronics/magnetic random access memory (mram) designs to world-class memory manufacturers. our products include: digital signal isolators isolated bus transceivers magnetic field sensors magnetic field gradient sensors (gradiometer) digital magnetic field sensors. the information provided by nve corporation is believed to be accurate. however, no responsibility is assumed by nve corporation for its use, nor for any infringement of patents, nor rights or licenses granted to third parties, which may result from its use. no license is granted by implication, or otherwise, under any patent or patent rights of nve corporation. nve corporation does not authorize, nor warrant, any nve corporation product for use in life support devices or systems or other critical applications. the use of nve corporation?s products in such applications is understood to be entirely at the customer's own risk. specifications shown are subject to change without notice. isb-ds-001-IL710T-a october 2002 .com .com .com
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